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(a-b) Bright field (BF) and high angle annular dark field (HAADF) STEM images of Si [110] taken at 200 kV on the UT-SA JEOL JEM-ARM200F. The HAADF image shows information transfer to 0.078 nm, while the BF image resolves spatial information < 0.1 nm.
(c-d) Bright field (BF) and high angle annular dark field (HAADF) STEM images of Si [110] taken at 120 kV on the UT-SA JEOL JEM-ARM200F. The HAADF image and BF image both show information transfer to < 0.1 nm.
The first transmission electron microscope of its caliber to be installed, the eagerly awaited atomic resolution JEOL JEMARM200F TEM arrived at the University of Texas San Antonio in January and by early February began
producing imaging results showing at least 78 picometer information transfer said Dr. Thomas Isabell, JEOL USA Director of the TEM Product Division.
UTSA physics and astronomy department chair Dr. Miguel Yacaman, a renowned electron microscopist and nanotechnology researcher, tested the new ARM200F performance on Si <110> samples.
“At the level of this new microscope, the potential for new discoveries is enormous,” says Yacaman, who likened the capabilities of the JEOL ARM200F for sub-atomic research to those of the Hubble telescope for intergalactic exploration.
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